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Name Professor SB Krupanidhi
(Professor SB Krupanidhi)
FNA ID P12-1579
Address Materials Research Centre, Indian Institute of Science,
City Bangalore
Pin Code 560012
Country India
Gender Male
Specialization Physics of Materials, Epitaxial Multi-Component Oxides, Compound Semiconductors, Superlattices, Functional Devices & Applications
Service in the Council
Qualification PhD
Membership FASc, FNAE
  Year of Election 2012  
E-mail sbk@iisc.ac.in, sbkenator@gmail.com
Personal Website

S.B. Krupanidhi obtained his MSc Tech (Applied Physics) (1975) from Andhra University and PhD (Physics) (1981) degree from Delhi University. He worked as a post-doctoral fellow in department of Physics, Queen\'s University, Kingston Canada (1981-84), Principal Scientist, Motorola, Albuquerque, USA (1984-88), Professor of Engineering Science, The Pennsylvania State University, USA (1988-95). Currently he is Professor of Materials, Materials Research Centre, Indian Institute of Science (1995 - ). He has built world class labs at MRC, IISc to establish research of international repute, in the areas of thin films of complex ferroic oxides, III-V and III-Nitride compound semiconductors and chalcopyrites for various devices such as high density memories, I.R. detectors, high bright LEDs and photovoltaics respectively.

Academic and Research Achievements: Professor Krupanidhi\'s research on multi-component ferroelectric oxides has focused on the oriented and epitaxial growth by pulsed laser ablation, sol-gel processing and magnetron sputtering. He was the first to couple the ECR plasma to physical vapor growth for low temperature epitaxy in complex oxides. Professor Krupanidhi was one of the first to integrate ferroelectric thin films on semiconductors to demonstrate ferroelectric field effect transistors which subsequently became the back bone of the development of ferroelectric random access memories (FRAMs). Based upon his significant contributions, he also functioned as a consultant to NEC, and Matsushita in Japan and Samsung in South Korea. Currently he is focusing on the development of engineered ferroelectric nano structures for accomplishing high capacitance density for ultra high density memories. The critical zones in the phase diagram of the PZT compositions for enhanced pyroelectric response considering both compositional and strain fluctuations in the microscopic regions were identified for the first time. Most recently these results are further confirmed by polarization mapping via piezo force microscopy by his group.

Professor Krupanidhi\'s work in the area of relaxor ferroelectrics has received major attention. His group was the first to design and formulate the multilayered relaxors with higher orders of strain via electrostriction. Most recently, his group discovered an unconventional phase transformation in the asymmetrically multilayered relaxors through interfacial strain coupling. This is considered most important result for high density charge pumping through field and strain induced phase switching. The mechanical stain acts as a mediator among the electric and magnetic domains and their micro structural interactions among the domains. This aspect has been exploited in the artificially structured superlattices of the multiferroic pervoskites.

In the area of III-V compound semiconductors, Professor Krupanidhi developed space quality solar cells involving MOCVD growth of epitaxial GaAs on Ge substrates. Efficiencies of upto 19% were achieved and were authenticated by NASA. Besides the device development, his group pioneered the basic science of III-V epitaxy, p- and n- type GaAs growth using auto carbon doping, and banc gap narrowing phenomena in hetero epitaxy. In addition, his research work included successful development of solar cells based upon CIGS (CuInGaSe) and eliminating the toxic CdS layer.

Most recently Professor Krupanidhi\'s research has been extended to the design and development of quantum well and quantum dot structures of epitaxial III-V compounds, specifically for longer wavelength Quantum Well structured Infrared Photodetectors (QWIPs). First set of results already established the successful development of IR detectors which are operating in the wavelength ranges of 3-5 and 8-10 micron. His group also pioneered droplet epitaxy of quantum dots of III-Nitrides using MBE process. These quantum dots are successfully employed in the band gap engineering and tuning of wavelength in high bright LEDs.

Other Contributions: Professor Krupanidhi serves as Member of editorial committee for Materials Research Innovations (USA), Integrated Ferroelectrics (USA) and served as Editor of Bulletin of Materials Science (2004-2010). He serves as member in working group on Micro/Nano electronics, DIT, Governing council, CMET and Member, Editorial Board of International society of Advanced Materials.

Awards and Honours: Professor Krupanidhi was conferred 2 Engineering Invention Awards at Motorola, USA, (1986), MRSI Medal, India (1997), VASVIK Medal (2004), MRS Superconductivity-Materials Science Award (2004), Tatachem Chair Professorship, Indian Institute of Science (2006), Rustum Choksi medal for research excellence (2006), J.C. Bose Fellow (2009) and CNR Rao prize lecture for Advanced Materials (2010). He was elected Member of the Asia Pacific Academy of Materials (2003), Fellow of the Indian Academy of Sciences, Bangalore (2003), Fellow of the Indian National academy of Engineering (2012), MRSI Distinguished Materials Scientist of the year award (2019), President of the Materials Research Society of India.

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